Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50 ${\rm cm}^{2}/{\rm Vs}$

High-mobility ambipolar ZnO-graphene hybrid thin film transistors

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm(2)/V·s, and a high on-off ratio of 10(5). The ambipolar...

ZnO-based transparent thin-film transistors

Highly transparent ZnO-based thin-film transistors ~TFTs! are fabricated with optical transmission ~including substrate! of ;75% in the visible portion of the electromagnetic spectrum. Current– voltage measurements indicate n-channel, enhancement-mode TFT operation with excellent drain current saturation and a drain current on-to-off ratio of ;10. Threshold voltages and channel mobilities of de...

The Role of High-κ TiHfO Gate Dielectric in Sputtered ZnO Thin-Film Transistors

Exploration of ZnO and ZnMgO/ZnO Thin Film Transistors

Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer

Electric-double-layer (EDL) thin-film transistors (TFTs) have attracted much attention due to their low operation voltages. Recently, EDL TFTs gated with radio frequency (RF) magnetron sputtered SiO₂ have been developed which is compatible to large-area electronics fabrication. In this work, fully transparent Indium-Gallium-Zinc-Oxide-based EDL TFTs on glass substrates have been fabricated at r...